-29 dBm sensitivity, +4 dBm overload at 125 Mbps (BER 10^-12 , 0.3 A/W PD).

The signal path of the NT22010 consists of a state-of-the-art, high sensitivity AGC (automatic gain control) trans-impedance amplifier followed by a Limiting Amplifier. Combined with an external Photodiode, a complete light-to-logic solution is provided.

In addition the NT22010 has a squelch mode and input-signal signal detect.

All passive components are integrated on-chip and the NT22010 is manufactured in a standard deep-sub-micron mixed signal CMOS process, giving an ultra low-cost, high performance and rugged solution.

Fabricated in standard high-volume mixed-signal CMOS process.

Less than 40 mA total current consumption.

Differential output with extended output swing.

3.3 V supply voltage.

High temperature operation (125 °C junction temperature).

No external components required within FOT.

Average Photocurrent monitor output available (IMON pad).

Chip Padout

Figure 1 - Bare die – 1.08 mm x 1.21 mm (including 60 µm scribe)
Pad pitch 150 µm, pads 96 µm (86 µm passivation opening)